Término solicitado: ARZUBIAGA, L./(22)
1 Registro/s encontrado/s en CAT+NORMA
| Tipo de Docum.: | artículo |
| Título: | In situ electrical characterization of palladium-based single electron transistors made by electromigration technique |
| Autor: | Arzubiaga, L.; Golmar, F.; Llopis, R.; Casanova, F.; Hueso, L. E. |
| Título Ser./Col.: | AIP Advances, 4(11) |
| Idioma: | eng |
| Datos de Edición: | s.l. AIP Publishing. 2014. |
| Pág./Vol.: | 7p. |
| Descriptores: | Electricidad; Electrones; Transistores; Paladio; Electrodos; Aleaciones de níquel; Electrostática |
| Resumen: | We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration of palladium and palladium-nickel alloy nanowires. We have optimized a gradual electromigration process for obtaining devices consisting of three terminals (source, drain and gate electrodes), which are capacitively coupled to a metallic cluster of nanometric dimensions. This metal nanocluster forms into the inter-electrode channel during the electromigration process and constitutes the active element of each device, acting as a quantum dot that rules the electron flow between source and drain electrodes. The charge transport of the as-fabricated devices shows Coulomb blockade characteristics and the source to drain conductance can be modulated by electrostatic gating. We have thus achieved the fabrication and in situ measurement of palladium-based SETs inside a liquid helium cryostat chamber. |
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Trabajo de INTI |
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URL: |
http://dx.doi.org/10.1063/1.4902170 |
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