Término solicitado: BARBARA, PAOLA/(22)
1 Registro/s encontrado/s en CAT+NORMA
| Tipo de Docum.: | artículo |
| Título: | Low carrier density epitaxial graphene devices on SiC |
| Autor: | Yang, Yanfei; Huang, Lung-I; Fukuyama, Yasuhiro; Liu, Fan-Hung; Real, Mariano A.; Barbara, Paola; Liang, Chi-Te; Newell, David B.; Elmquist, Randolph E. |
| Idioma: | eng |
| Datos de Edición: | s.l. arXiv. 2014. |
| Pág./Vol.: | 17p. |
| Descriptores: | Fibras de carbono; Teoría cuántica; Agua; Grafito; Corrosión por exfoliación; Propiedades eléctricas; Metrología; Resistencia de materiales |
| Resumen: | Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple process can reach a carrier density in the range of 10^10 cm^(-2) to 10^11 cm^(-2) with mobility about 8000 cm^2/V/s or higher. In a moderately doped device with a carrier density n = 2.4 x 10^11 cm^(-2) and mobility = 5200 cm^2/V/s, we observe highly developed quantized Hall resistance plateaus with filing factor of 2 at magnetic field strengths of less than 4 T. Doping concentrations can be restored to higher levels by heat treatment in Ar, while devices with both p-type and n-type majority carriers tend to drift toward lower carrier concentrations in ambient air. |
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URL: |
https://arxiv.org/abs/1404.1048 |
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