Término solicitado: REAL, MARIANO A./(22)
5 Registro/s encontrado/s en CAT+NORMA
| Tipo de Docum.: | artículo |
| Título: | Controlled generation and detection of a thermal bias in Corbino devices under the quantum Hall regime |
| Autor: | Real, Mariano A.; Tonina, Alejandra; Arrachea, L.; Giudici, P.; Reichl, C; Wegscheider, W.; Dietsche, W. |
| Título Ser./Col.: | arXiv:2210.15599v3 |
| Idioma: | eng |
| Datos de Edición: | s.l. arXiv. 2023. |
| Pág./Vol.: | 6p. |
| Descriptores: | Electrodinámica cuántica; Magnetorresistencia; Termoelectricidad; Mediciones; Método experimental; Metrología |
| Resumen: | We present an experimental technique to generate and measure a temperature bias in the quantum Hall effect of GaAs/AlGaAs Corbino samples. The bias is generated by injecting an electrical current at a central resistive heater and the resulting radial temperature drop is determined by conductance measurements at internal and external concentric rings. The experimental results agree with the predictions of numerical simulations of the heat flow through the substrate. We also compare these results with previous predictions based on the thermoelectric response of these devices. |
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URL: |
https://arxiv.org/abs/2210.15599 |
| Tipo de Docum.: | artículo |
| Título: | Thermoelectricity in Quantum-Hall Corbino structures |
| Autor: | Real, Mariano A.; Gresta, Daniel; Reichl, Christian; Weis, Jürgen; Tonina, Alejandra; Giudici, Paula; Arrachea, Liliana; Wegscheider, Werner; Dietsche, Werner |
| Título Ser./Col.: | Physical Review Applied, 14 |
| Autor Inst. Ser./Col.: | American Physical Society. US |
| Idioma: | eng |
| Datos de Edición: | s.l. American Physical Society. 2020. |
| Pág./Vol.: | 8p. |
| Descriptores: | Termoelectricidad; Estructuras; Electrodinámica cuántica; Voltaje; Conductividad eléctrica; Electrones; Fonones; Enfriamiento; Mediciones; Campo magnético |
| Resumen: | We measure the thermoelectric response of Corbino structures in the quantum Hall effect regime and compare it with a theoretical analysis. The measured thermoelectric voltages are qualitatively and quantitatively simulated based upon the independent measurement of the conductivity indicating that they originate predominantly from the electron diffusion. Electron-phonon interaction does not lead to a phonon-drag contribution in contrast to earlier Hall-bar experiments. This implies a description of the Onsager coefficients on the basis of a single transmission function, from which both thermovoltage and conductivity can be predicted with a single fitting parameter. It furthermore let us predict a figure of merit for the efficiency of thermoelectric cooling which becomes very large for partially filled Landau levels (LL) and high magnetic fields. |
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URL: |
https://arxiv.org/abs/2003.01748 |
| Tipo de Docum.: | artículo |
| Título: | Thermoelectric cooling properties of a quantum Hall Corbino device |
| Autor: | Mateos, Juan Herrera; Real, Mariano A.; Reichl, Christian; Tonina, Alejandra; Wegscheider, Werner; Dietsche, Werner; Arrachea, Liliana |
| Título Ser./Col.: | Physical Review B, 103 |
| Idioma: | eng |
| Datos de Edición: | s.l. arXiv. 2021. |
| Pág./Vol.: | 10p. |
| Descriptores: | Termoelectricidad; Enfriamiento; Electrodinámica cuántica; Performance; Mediciones |
| Resumen: | We analyze the thermoelectric cooling properties of a Corbino device in the quantum Hall regime on the basis of experimental data of electrical conductance. We focus on the cooling power and the coefficient of performance within and beyond linear response. Thermovoltage measurements in this device reported in Phys. Rev. Applied, 14 034019 (2020) indicated that the transport takes place in the diffusive regime, without signatures of effects due to the electron-phonon interaction in a wide range of temperatures and filling factors. In this regime, the heat and charge currents by electrons can be described by a single transmission function. We infer this function from experimental data of conductance measurements and we calculate the cooling power and the coefficient of performance for a wide range of filling factors and temperatures, as functions of the thermal and electrical biases. We predict an interesting cooling performance in several parameter regimes. |
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URL: |
https://arxiv.org/abs/2012.12456 |
| Tipo de Docum.: | artículo |
| Título: | Low carrier density epitaxial graphene devices on SiC |
| Autor: | Yang, Yanfei; Huang, Lung-I; Fukuyama, Yasuhiro; Liu, Fan-Hung; Real, Mariano A.; Barbara, Paola; Liang, Chi-Te; Newell, David B.; Elmquist, Randolph E. |
| Idioma: | eng |
| Datos de Edición: | s.l. arXiv. 2014. |
| Pág./Vol.: | 17p. |
| Descriptores: | Fibras de carbono; Teoría cuántica; Agua; Grafito; Corrosión por exfoliación; Propiedades eléctricas; Metrología; Resistencia de materiales |
| Resumen: | Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective layer, and show that etching with aqua regia results in p-type (hole) molecular doping of our un-gated, contamination-free EG. Devices fabricated by this simple process can reach a carrier density in the range of 10^10 cm^(-2) to 10^11 cm^(-2) with mobility about 8000 cm^2/V/s or higher. In a moderately doped device with a carrier density n = 2.4 x 10^11 cm^(-2) and mobility = 5200 cm^2/V/s, we observe highly developed quantized Hall resistance plateaus with filing factor of 2 at magnetic field strengths of less than 4 T. Doping concentrations can be restored to higher levels by heat treatment in Ar, while devices with both p-type and n-type majority carriers tend to drift toward lower carrier concentrations in ambient air. |
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URL: |
https://arxiv.org/abs/1404.1048 |
| Tipo de Docum.: | documento de conferencia |
| Título: | Comparing two methods of electrometers coulomb calibration |
| Autor: | Bierzychudek, Marcos E.; Real, Mariano A. |
| Autor Instit.: | INTI-Física y Metrología. Buenos Aires. AR |
| Reunión: | Conference on Precision Electromagnetic Measurements CPEM 2014 (pp. 558-559), Rio de Janeiro. BR, 2014 |
| Idioma: | eng |
| Datos de Edición: | s.l. IEEE. 2014. |
| Pág./Vol.: | 2p. |
| Notas: | Fuente: IEEE, de acuerdo a su política de copyright: "Los autores / empleadores pueden reproducir o autorizar a terceros a reproducir la Obra, material extraído literalmente de la Obra o trabajos derivados para el uso personal del autor o para uso de la empresa, siempre que se indique la fuente y el aviso de copyright de IEEE, no deben usarse las copias de ninguna manera que implique el respaldo de IEEE de un producto o servicio de cualquier empleador y las copias en sí no se ofrecen para la venta". |
| Unidad técnica: | INTI-Física y Metrología. |
| Descriptores: | Electrometría; Electrómetros; Mediciones eléctricas; Cargas eléctricas; Calibración; Corriente eléctrica; Dosimetría; Capacitores; Voltaje |
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